Point Defect Engineered Si Sub-Bandgap Light-emitting Diodes
We present a novel approach to enhance light emission in Si and demonstrate sub-bandgap light-emitting diodes (LED) based on the introduction of point defects. Ion implantation, pulsed laser melting and rapid thermal annealing were used to create LEDs containing self-interstitial-rich optically active regions. Procedures to fabricate LEDs on a bulk silicon substrate and on a silicon-on-insulator (SOI) wafer will be presented, and methods to improve device performances will be discussed. The...[Show more]
|Collections||ANU Research Publications|
|Source:||Proc. SPIE 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV|
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