Skip navigation
Skip navigation

Point Defect Engineered Si Sub-Bandgap Light-emitting Diodes

Bao, Jiming; Charnvanichborikarn, Supakit; Yang, Yu; Tabbal, Malek; Shin, Byungha; Wong-Leung, Yin-Yin (Jennifer); Williams, James; Aziz, Michael; Capasso, Federico


We present a novel approach to enhance light emission in Si and demonstrate sub-bandgap light-emitting diodes (LED) based on the introduction of point defects. Ion implantation, pulsed laser melting and rapid thermal annealing were used to create LEDs containing self-interstitial-rich optically active regions. Procedures to fabricate LEDs on a bulk silicon substrate and on a silicon-on-insulator (SOI) wafer will be presented, and methods to improve device performances will be discussed. The...[Show more]

CollectionsANU Research Publications
Date published: 2008
Type: Conference paper
Source: Proc. SPIE 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV
DOI: 10.1117/12.758543


There are no files associated with this item.

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator