Skip navigation
Skip navigation

Study of defects in ion-implanted silicon using photoluminescence and positron annihilation

Request a Copy

link to publisher version

  • Altmetric Citations

Harding, Ruth E; Davies, G; Coleman, Paul; Burrows, C P; Wong-Leung, Jennifer

Description

We report data on high-quality silicon samples implanted with 4 MeV silicon ions at doses of 1012-1014cm-2 measured using variable energy positron annihilation spectroscopy (VEPAS) and photoluminescence (PL). Individual, mainly interstitial related, defect centres can be observed with PL, and the average depth and concentration of vacancy clusters (assuming di-vacancies) can be found with VEPAS. We measure these samples as functions of dose and annealing from room temperature to 600°C and...[Show more]

dc.contributor.authorHarding, Ruth E
dc.contributor.authorDavies, G
dc.contributor.authorColeman, Paul
dc.contributor.authorBurrows, C P
dc.contributor.authorWong-Leung, Jennifer
dc.date.accessioned2015-12-07T22:14:39Z
dc.identifier.issn0921-4526
dc.identifier.urihttp://hdl.handle.net/1885/17528
dc.description.abstractWe report data on high-quality silicon samples implanted with 4 MeV silicon ions at doses of 1012-1014cm-2 measured using variable energy positron annihilation spectroscopy (VEPAS) and photoluminescence (PL). Individual, mainly interstitial related, defect centres can be observed with PL, and the average depth and concentration of vacancy clusters (assuming di-vacancies) can be found with VEPAS. We measure these samples as functions of dose and annealing from room temperature to 600°C and assess the circumstances in which PL can be used as a quantitative technique.
dc.publisherElsevier
dc.sourcePhysica B
dc.subjectKeywords: Annealing; Energy transfer; Ion implantation; Laser applications; Phonons; Photoluminescence; Positron annihilation spectroscopy; Quenching; Radiation damage; Silicon; Divacancies; Laser penetration depth; Transient enhanced diffusion (TED); Crystal defec Ion implantation; PAS; Photoluminescence; Silicon
dc.titleStudy of defects in ion-implanted silicon using photoluminescence and positron annihilation
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume340-342
dc.date.issued2003
local.identifier.absfor091299 - Materials Engineering not elsewhere classified
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.absfor020405 - Soft Condensed Matter
local.identifier.ariespublicationu9607716xPUB1
local.type.statusPublished Version
local.contributor.affiliationHarding, Ruth E, King's College London
local.contributor.affiliationDavies, G, King's College London
local.contributor.affiliationColeman, Paul, University of Bath
local.contributor.affiliationBurrows, C P , University of Bath
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.startpage738
local.bibliographicCitation.lastpage742
local.identifier.doi10.1016/j.physb.2003.09.152
dc.date.updated2015-12-07T07:32:34Z
local.identifier.scopusID2-s2.0-0347764762
CollectionsANU Research Publications

Download

File Description SizeFormat Image
01_Harding_Study_of_defects_in_2003.pdf211.59 kBAdobe PDF    Request a copy
Show simple item record


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  17 November 2022/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator