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Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon

Rougieux, Fiacre; MacDonald, Daniel; McIntosh, Keith; Cuevas, Andres


We report on the formation of a lightly doped p-n junction at the surface of compensated p-type silicon wafers, caused by dopant segregation during thermal oxidation. Experimental evidence and characterization of the junction is obtained by secondary ion

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
Source: Semiconductor Science and Technology
DOI: 10.1088/0268-1242/25/5/055009


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