Skip navigation
Skip navigation

Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon

Rougieux, Fiacre; MacDonald, Daniel; McIntosh, Keith; Cuevas, Andres

Description

We report on the formation of a lightly doped p-n junction at the surface of compensated p-type silicon wafers, caused by dopant segregation during thermal oxidation. Experimental evidence and characterization of the junction is obtained by secondary ion

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
URI: http://hdl.handle.net/1885/17383
Source: Semiconductor Science and Technology
DOI: 10.1088/0268-1242/25/5/055009

Download

File Description SizeFormat Image
01_Rougieux_Characteristics_of_an_2010.pdf541.79 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  12 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator