Liu, An Yao; Yan, Di; Wong-Leung, Jennifer; Li, Li (Lily); Phang, Sieu Pheng; Cuevas, Andres; Macdonald, Daniel
We report direct experimental evidence for the strong impurity gettering effects associated with the formation of diffusion-doped polysilicon passivating contacts. Iron is used as a marker impurity in silicon to quantify the gettering effectiveness. By monitoring the iron redistribution from the silicon wafer bulk to the polysilicon surface layers, via a combination of carrier lifetime, secondary ion mass spectrometry (SIMS), and transmission electron microscopy (TEM) techniques, the respective...[Show more]
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