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Unexpected Benefits of Rapid Growth Rate for III-V Nanowires

Joyce, Hannah J; Gao, Qiang; Tan, Hoe Hark; Jagadish, Chennupati; Kim, Yong; Fickenscher, M A; Perera, S; Hoang, Thang B; Smith, Leigh M; Jackson, Howard E; Yarrison-Rice, Jan M; Zhang, Xin; Zou, Jin


In conventional planar growth of bulk III-V materials, a slow growth rate favors high crystallographlc quality, optical quality, and purity of the resulting material. Surprisingly, we observe exactly the opposite effect for Au-assisted GaAs nanowlre growth. By employing a rapid growth rate, the resulting nanowires are markedly less tapered, are free of planar crystallographlc defects, and have very high purity with minimal Intrinsic dopant Incorporation. Importantly, carrier lifetimes are not...[Show more]

CollectionsANU Research Publications
Date published: 2009
Type: Journal article
Source: Nano Letters
DOI: 10.1021/n1803182c


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