Observation of enhanced infrared absorption in silicon supersaturated with gold by pulsed laser melting of nanometer-thick gold films
We demonstrate that pulsed laser melting (PLM) of thin 1, 5, and 10 nm-thick vapor-deposited gold layers on silicon enhances its room-temperature sub-band gap infrared absorption, as in the case of ion-implanted and PLM-treated silicon. The former approach offers reduced fabrication complexity and avoids implantation-induced lattice damage compared to ion implantation and pulsed laser melting, while exhibiting comparable optical absorptance. We additionally observed strong broadband absorptance...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|Access Rights:||Open Access|
|01_Chow_Observation_of_enhanced_2018.pdf||1.15 MB||Adobe PDF|
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