Active-oxidation of Si as the source of vapor-phase reactants in the growth of SiOₓ nanowires on Si
Gold-coated silicon wafers were annealed at temperatures in the range from 800–1100 °C in a N₂ ambient containing a low (3–10 ppm) residual O₂ concentration. A dense network of amorphous silicananowires was only observed on samples annealed at temperatures above 1000 °C and was correlated with the development of faceted etch-pits in the Si surface. Comparison with known thermodynamic data for the oxidation of Si and vapor-pressures of reactants shows that nanowire growth is mediated by a...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Kim_Active-oxidation_of_Si_as_the_2010.pdf||Published Version||569.54 kB||Adobe PDF|
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