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Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers

Wang, Y. J.; Xu, S. J.; Li, Q.; Zhao, D. G.; Yang, H.

Description

The optical properties of two kinds of InGaN∕GaNquantum-wellslight emitting diodes, one of which was doped with Si in barriers while the other was not, are comparatively investigated using time-integrated photoluminescence and time-resolved photoluminescence techniques. The results clearly demonstrate the coexistence of the band gap renormalization and phase-space filling effect in the structures with Si doped barriers. It is surprisingly found that photogenerated carriers in the intentionally...[Show more]

dc.contributor.authorWang, Y. J.
dc.contributor.authorXu, S. J.
dc.contributor.authorLi, Q.
dc.contributor.authorZhao, D. G.
dc.contributor.authorYang, H.
dc.date.accessioned2015-12-03T04:44:25Z
dc.date.available2015-12-03T04:44:25Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/17004
dc.description.abstractThe optical properties of two kinds of InGaN∕GaNquantum-wellslight emitting diodes, one of which was doped with Si in barriers while the other was not, are comparatively investigated using time-integrated photoluminescence and time-resolved photoluminescence techniques. The results clearly demonstrate the coexistence of the band gap renormalization and phase-space filling effect in the structures with Si doped barriers. It is surprisingly found that photogenerated carriers in the intentionally undoped structures decay nonexponentially, whereas carriers in the Si doped ones exhibit a well exponential time evolution. A new model developed by O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz, and W. H. Rühle [J. Optoelectron. Adv. Mater.7, 115 (2005)] was used to simulate the decay curves of the photogenerated carriers in both structures, which enables us to determine the localization length of the photogenerated carriers in the structures. It is found that the Si doping in the barriers not only leads to remarkable many-body effects but also significantly affects the carrier recombination dynamics in InGaN∕GaN layered heterostructures.
dc.description.sponsorshipThe work was supported by HK RGC-CERG grants under contract No. HKU-7036/03P.
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 3/12/15). Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2168035
dc.sourceApplied Physics Letters
dc.titleBand gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers
dc.typeJournal article
local.description.notesImported from ARIES. At the time of publication the author Li was affiliated with Department of Physics and HKU-CAS Joint Laboratory on New Materials, The University of Hong Kong.
local.identifier.citationvolume88
dc.date.issued2006-01-24
local.identifier.absfor020501
local.identifier.ariespublicationu4367518xPUB4
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationWang, Yingjuan, University of Hong Kong, Hong Kong
local.contributor.affiliationXu, Shijie, University of Hong Kong, Hong Kong
local.contributor.affiliationLi, Qing, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationZhao, D G, Chinese Academy of Sciences, China
local.contributor.affiliationYang, Hui, Chinese Academy of Sciences, China
local.bibliographicCitation.issue4
local.bibliographicCitation.startpage041903
local.identifier.doi10.1063/1.2168035
CollectionsANU Research Publications

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