Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers
The optical properties of two kinds of InGaN∕GaNquantum-wellslight emitting diodes, one of which was doped with Si in barriers while the other was not, are comparatively investigated using time-integrated photoluminescence and time-resolved photoluminescence techniques. The results clearly demonstrate the coexistence of the band gap renormalization and phase-space filling effect in the structures with Si doped barriers. It is surprisingly found that photogenerated carriers in the intentionally...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Wang_Band_gap_renormalization_and_2006.pdf||421.23 kB||Adobe PDF|
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