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Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers

Wang, Y. J.; Xu, S. J.; Li, Q.; Zhao, D. G.; Yang, H.


The optical properties of two kinds of InGaN∕GaNquantum-wellslight emitting diodes, one of which was doped with Si in barriers while the other was not, are comparatively investigated using time-integrated photoluminescence and time-resolved photoluminescence techniques. The results clearly demonstrate the coexistence of the band gap renormalization and phase-space filling effect in the structures with Si doped barriers. It is surprisingly found that photogenerated carriers in the intentionally...[Show more]

CollectionsANU Research Publications
Date published: 2006-01-24
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.2168035


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