Wang, Y. J.; Xu, S. J.; Li, Q.; Zhao, D. G.; Yang, H.
The optical properties of two kinds of InGaN∕GaNquantum-wellslight emitting diodes, one of which was doped with Si in barriers while the other was not, are comparatively investigated using time-integrated photoluminescence and time-resolved photoluminescence techniques. The results clearly demonstrate the coexistence of the band gap renormalization and phase-space filling effect in the structures with Si doped barriers. It is surprisingly found that photogenerated carriers in the intentionally...[Show more]
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