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Two-photon photoluminescence and excitation spectra of InGaN/GaN quantum wells

Li, Q.; Xu, S. J.; Li, G. Q.; Dai, D. C.; Che, C. M.

Description

We report an observation of efficient two-photonphotoluminescence (TPL) of InGaN∕GaN multi-quantum-well (MQW) structures using broadband femtosecond near-infrared excitation laser. Near quadratic excitation-intensity dependence and asymmetric collinear interferometric autocorrelation trace of the TPL signal unambiguously verify the nonlinearity of the TPL process. We also measured the excitation spectrum of the TPL signal and found that it can be fitted well with the theoretical two-photon...[Show more]

dc.contributor.authorLi, Q.
dc.contributor.authorXu, S. J.
dc.contributor.authorLi, G. Q.
dc.contributor.authorDai, D. C.
dc.contributor.authorChe, C. M.
dc.date.accessioned2015-12-03T04:03:13Z
dc.date.available2015-12-03T04:03:13Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/17000
dc.description.abstractWe report an observation of efficient two-photonphotoluminescence (TPL) of InGaN∕GaN multi-quantum-well (MQW) structures using broadband femtosecond near-infrared excitation laser. Near quadratic excitation-intensity dependence and asymmetric collinear interferometric autocorrelation trace of the TPL signal unambiguously verify the nonlinearity of the TPL process. We also measured the excitation spectrum of the TPL signal and found that it can be fitted well with the theoretical two-photon absorption coefficient formula for direct wide gap semiconductors. The decay time of the TPL signal was determined using a time-resolved photoluminescence technique. These results demonstrate the strong nonlinear optical property of InGaN∕GaNMQWs.
dc.description.sponsorshipThe work was supported by Hong Kong Research Grants Council-Competitive Earmarked Research Grants under Contract No. HKU-7036/03P and the Research Grants of the University of Hong Kong HKU under Contract No. 10205780, as well as partially by the University Development Funding of HKU under Contract No. 00600009.
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 3/12/15). Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2218772
dc.sourceApplied Physics Letters
dc.titleTwo-photon photoluminescence and excitation spectra of InGaN/GaN quantum wells
dc.typeJournal article
local.description.notesImported from ARIES. At the time of publication the author Li was affiliated with Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China and HKU-CAS Joint Laboratory on New Materials, The University of Hong Kong.
local.identifier.citationvolume89
dc.date.issued2006-07-06
local.identifier.absfor020501
local.identifier.ariespublicationu4367518xPUB2
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationLi, Qing, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationXu, Shijie, University of Hong Kong, Hong Kong
local.contributor.affiliationLi, Guangqi, University of Hong Kong, Hong Kong
local.contributor.affiliationDai, Dechang, University of Hong Kong, Hong Kong
local.contributor.affiliationChe, C. M., University of Hong Kong, Hong Kong
local.bibliographicCitation.issue1
local.bibliographicCitation.startpage011104
local.identifier.doi10.1063/1.2218772
CollectionsANU Research Publications

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