Spontaneous emission mechanisms of GaInAsN/GaAs quantum dot systems

Abstract

Variable-temperature photoluminescence(PL)spectra taken on two different kinds of GaInAsN quantum dots(QDs), having different In and N compositions and thicknesses, have been investigated both experimentally and theoretically. It is found that the temperature dependence of the spontaneous emissions from both samples behaves differently. Adopting a localized-state luminescence model, the quantitative reproduction of the measured variable-temperature PLspectra reveals a dissimilarity in luminescence mechanisms of the two samples. These results enrich the present understanding of the luminescence mechanisms in the GaInAsN QD systems and are important for design and improvement of GaInAsN QDs based light-emitting devices.