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Pt nanocrystals formed by ion implantation: a defect-mediated nucleation process

Giulian, R.; Kluth, P.; Araujo, L. L.; Llewellyn, D. J.; Ridgway, M. C.


The influence of ion irradiation of SiO₂ on the size of metalnanocrystals (NCs) formed by ion implantation has been investigated. Thin SiO₂ films were irradiated with high-energy Ge ions then implanted with Pt ions. Without Geirradiation, the largest Pt NCs were observed beyond the Pt projected range. With irradiation, Ge-induced structural modification of the SiO₂ layer yielded a decrease in Pt NC size with increasing Ge fluence at such depths. A defect-mediated NC nucleation mechanism is...[Show more]

CollectionsANU Research Publications
Date published: 2007-08-27
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.2777165


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