Pt nanocrystals formed by ion implantation: a defect-mediated nucleation process
The influence of ion irradiation of SiO₂ on the size of metalnanocrystals (NCs) formed by ion implantation has been investigated. Thin SiO₂ films were irradiated with high-energy Ge ions then implanted with Pt ions. Without Geirradiation, the largest Pt NCs were observed beyond the Pt projected range. With irradiation, Ge-induced structural modification of the SiO₂ layer yielded a decrease in Pt NC size with increasing Ge fluence at such depths. A defect-mediated NC nucleation mechanism is...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Giulian_Pt_nanocrystals_formed_by_ion_2007.pdf||Published Version||482.02 kB||Adobe PDF|
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