Giulian, R.; Araujo, L. L.; Kluth, P.; Sprouster, D. J.; Schnohr, C. S.; Johannessen, B.; Foran, G. J.; Ridgway, M. C.
The growth and structure of Pt nanocrystals (NCs) formed by ion implantation in a-SiO₂ has been investigated as a function of the annealing conditions. Transmission electron microscopy and small-angle x-ray scatteringmeasurements demonstrate that the annealing ambient has a significant influence on NC size. Samples annealed in either Ar, O₂, or forming gas (95% N₂: 5% H₂) at temperatures ranging from 500 °C–1300 °C form spherical NCs with mean diameters ranging from 1–14 nm. For a given...[Show more]
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