Xu, S. J.; Wang, H. J.; Cheung, S. H.; Li, Q.; Dai, X. Q.; Xie, M. H.; Tong, S. Y.
A number of wurtzite GaN epilayers directly grown on 4H-SiC-(0001) misoriented by 0, 3.5°, 5°,
8°, and 21° with plasma-assisted molecular-beam epitaxy were optically characterized with
photoluminescence and excitation spectra. An intense shallow-defect emission peak locating at
energy position ~70 meV lower than the near band edge emission peak at 3.47 eV is found in the
emission spectra of the GaN films on 4H-SiC misoriented by 8° and 21°. Stacking mismatch
boundaries are supposed to be...[Show more]
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