Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates
A number of wurtzite GaN epilayers directly grown on 4H-SiC-(0001) misoriented by 0, 3.5°, 5°, 8°, and 21° with plasma-assisted molecular-beam epitaxy were optically characterized with photoluminescence and excitation spectra. An intense shallow-defect emission peak locating at energy position ~70 meV lower than the near band edge emission peak at 3.47 eV is found in the emission spectra of the GaN films on 4H-SiC misoriented by 8° and 21°. Stacking mismatch boundaries are supposed to be...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Xu_Shallow_optically_active_2003.pdf||Published Version||55.87 kB||Adobe PDF|
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