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Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates

Xu, S. J.; Wang, H. J.; Cheung, S. H.; Li, Q.; Dai, X. Q.; Xie, M. H.; Tong, S. Y.


A number of wurtzite GaN epilayers directly grown on 4H-SiC-(0001) misoriented by 0, 3.5°, 5°, 8°, and 21° with plasma-assisted molecular-beam epitaxy were optically characterized with photoluminescence and excitation spectra. An intense shallow-defect emission peak locating at energy position ~70 meV lower than the near band edge emission peak at 3.47 eV is found in the emission spectra of the GaN films on 4H-SiC misoriented by 8° and 21°. Stacking mismatch boundaries are supposed to be...[Show more]

CollectionsANU Research Publications
Date published: 2003-10-27
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.1623006


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