Skip navigation
Skip navigation
Open Research will be down for maintenance between 8:00 and 8:15 am on Tuesday, December 1 2020.

Nonvolatile memories using deep traps formed in Al[sub 2]O[sub 3] by metal ion implantation

Kim, Min Choul; Hong, Seung Hui; Kim, Hye Ryong; Kim, Sung; Choi, Suk-Ho; Elliman, R. G.; Russo, S. P.

Description

We demonstrate the feasibility of an approach to nonvolatile memory (NVM) that exploits charge trapping at deep-energy levels formed in Al₂O₃ by metal doping. Our calculations show that V and Nb are expected to form such deep energy levels in the band gap of Al₂O₃. To demonstrate the effectiveness of this approach these metal ions were ion-implanted into test structures based on an Al₂O₃ trapping layer. Several structural analysis techniques and photocurrent spectroscopy show that the doped...[Show more]

dc.contributor.authorKim, Min Choul
dc.contributor.authorHong, Seung Hui
dc.contributor.authorKim, Hye Ryong
dc.contributor.authorKim, Sung
dc.contributor.authorChoi, Suk-Ho
dc.contributor.authorElliman, R. G.
dc.contributor.authorRusso, S. P.
dc.date.accessioned2015-12-02T05:35:33Z
dc.date.available2015-12-02T05:35:33Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/16974
dc.description.abstractWe demonstrate the feasibility of an approach to nonvolatile memory (NVM) that exploits charge trapping at deep-energy levels formed in Al₂O₃ by metal doping. Our calculations show that V and Nb are expected to form such deep energy levels in the band gap of Al₂O₃. To demonstrate the effectiveness of this approach these metal ions were ion-implanted into test structures based on an Al₂O₃ trapping layer. Several structural analysis techniques and photocurrent spectroscopy show that the doped metal ions are located close to the Al₂O₃/SiO₂ interface and exhibit characteristics consistent with some of the deep levels predicted in calculations. The resulting test devices are shown to exhibit promising NVM characteristics.
dc.description.sponsorshipThis work was supported by the Korea Science and Engineering Foundation KOSEF grant funded by the Korea government MOST Grant No. R01-2007-000-20142-0. M.C.K. acknowledges a support from the Kyung Hee University Graduate School Scholarship for Outstanding Research Papers in the second semester, 2007.
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 2/12/15). Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.3097799
dc.sourceApplied Physics Letters
dc.subjectKeywords: Charge trapping; Data storage equipment; Doping (additives); Ion bombardment; Ion implantation; Metal ions; Metals; Niobium; Photocurrents; Silicon compounds; Structural analysis; Trace analysis; Band gaps; Deep energy levels; Deep levels; Deep traps; Ene
dc.titleNonvolatile memories using deep traps formed in Al[sub 2]O[sub 3] by metal ion implantation
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume94
dc.date.issued2009-03-19
local.identifier.absfor020499
local.identifier.ariespublicationu4326120xPUB146
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationKim, Min Choul, Kyung Hee University, Korea, South
local.contributor.affiliationHong , Seung Hui, Kyung Hee University, Korea, South
local.contributor.affiliationKim, Hye Ryong, Kyung Hee University, Korea, South
local.contributor.affiliationKim, Sung, Kyung Hee University, Korea, South
local.contributor.affiliationChoi, Suk Ho, Kyung Hee University, Korea, South
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationRusso, Salvy P, RMIT University, Australia
local.bibliographicCitation.issue11
local.bibliographicCitation.startpage112110
local.identifier.doi10.1063/1.3097799
dc.date.updated2016-02-24T10:55:11Z
local.identifier.scopusID2-s2.0-63049138175
local.identifier.thomsonID000264380300041
CollectionsANU Research Publications

Download

File Description SizeFormat Image
01_Kim_Nonvolatile_memories_using_2009.pdfPublished Version326.96 kBAdobe PDFThumbnail


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator