Nonvolatile memories using deep traps formed in Al[sub 2]O[sub 3] by metal ion implantation
We demonstrate the feasibility of an approach to nonvolatile memory (NVM) that exploits charge trapping at deep-energy levels formed in Al₂O₃ by metal doping. Our calculations show that V and Nb are expected to form such deep energy levels in the band gap of Al₂O₃. To demonstrate the effectiveness of this approach these metal ions were ion-implanted into test structures based on an Al₂O₃ trapping layer. Several structural analysis techniques and photocurrent spectroscopy show that the doped...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Kim_Nonvolatile_memories_using_2009.pdf||Published Version||326.96 kB||Adobe PDF|
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