Kim, Min Choul; Hong, Seung Hui; Kim, Hye Ryong; Kim, Sung; Choi, Suk-Ho; Elliman, R. G.; Russo, S. P.
We demonstrate the feasibility of an approach to nonvolatile memory (NVM) that exploits charge trapping at deep-energy levels formed in Al₂O₃ by metal doping. Our calculations show that V and Nb are expected to form such deep energy levels in the band gap of Al₂O₃. To demonstrate the effectiveness of this approach these metal ions were ion-implanted into test structures based on an Al₂O₃ trapping layer. Several structural analysis techniques and photocurrent spectroscopy show that the doped...[Show more]
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