Doping dependence of the carrier lifetime crossover point upon dissociation of iron-boron pairs in crystalline silicon
The excess carrier density at which the carrier lifetime in crystalline silicon remains unchanged after dissociating iron-boron pairs, known as the crossover point, is reported as a function of the borondopant concentration. Modeling this doping dependence with the Shockley-Read-Hall model does not require knowledge of the iron concentration and suggests a possible refinement of reported values of the capture cross sections for electrons and holes of the acceptor level of iron-boron pairs. In...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Macdonald_Doping_dependence_of_the_2006.pdf||Published Version||73.36 kB||Adobe PDF|
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