Macdonald, D.; Roth, T.; Deenapanray, P. N. K.; Trupke, T.; Bardos, R. A.
The excess carrier density at which the carrier lifetime in crystalline silicon remains unchanged after dissociating iron-boron pairs, known as the crossover point, is reported as a function of the borondopant concentration. Modeling this doping dependence with the Shockley-Read-Hall model does not require knowledge of the iron concentration and suggests a possible refinement of reported values of the capture cross sections for electrons and holes of the acceptor level of iron-boron pairs. In...[Show more]
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.