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Doping dependence of the carrier lifetime crossover point upon dissociation of iron-boron pairs in crystalline silicon

Macdonald, D.; Roth, T.; Deenapanray, P. N. K.; Trupke, T.; Bardos, R. A.


The excess carrier density at which the carrier lifetime in crystalline silicon remains unchanged after dissociating iron-boron pairs, known as the crossover point, is reported as a function of the borondopant concentration. Modeling this doping dependence with the Shockley-Read-Hall model does not require knowledge of the iron concentration and suggests a possible refinement of reported values of the capture cross sections for electrons and holes of the acceptor level of iron-boron pairs. In...[Show more]

CollectionsANU Research Publications
Date published: 2006
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.2358126


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