Defect generation at SiO₂/Si interfaces by low pressure chemical vapor deposition of silicon nitride
Low pressurechemical vapor deposition of Si₃N₄ on oxidized Si (111) surfaces causes a change in the properties of the dominant interface defect, the Pb center, observed by electron paramagnetic resonance. The change in the signature of the Pb center is consistent with the formation of an oxynitride layer at the interface, which could be formed during the initial stages of nitride layer deposition. Photoconductivity decay measurements show a concomitant increase in the minority carrier...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Jin_Defect_generation_at_SiO₂/Si_2006.pdf||408.39 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.