Investigation of reactive ion etching of dielectrics and Si in CHF₃/O₂ or CHF₃/Ar for photovoltaic applications
Using a combination of etch rate, photoconductance, and deep level transient spectroscopy(DLTS) measurements, the authors have investigated the use of reactive ion etching (RIE) of dielectrics and Si in CHF₃∕O₂ and CHF₃∕Arplasmas for photovoltaic applications. The radio frequency power (rf-power) and gas flow rate dependencies have shown that the addition of either O₂ or Ar to CHF₃ can be used effectively to change the etch selectivity between SiO₂ and Si₃N₄. The effective carrier lifetime of...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films|
|01_Gatzert_Investigation_of_reactive_ion_2006.pdf||Published Version||143.36 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.