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Investigation of reactive ion etching of dielectrics and Si in CHF₃/O₂ or CHF₃/Ar for photovoltaic applications

Gatzert, C.; Blakers, A. W.; Deenapanray, Prakash N. K.; Macdonald, D.; Auret, F. D.


Using a combination of etch rate, photoconductance, and deep level transient spectroscopy(DLTS) measurements, the authors have investigated the use of reactive ion etching (RIE) of dielectrics and Si in CHF₃∕O₂ and CHF₃∕Arplasmas for photovoltaic applications. The radio frequency power (rf-power) and gas flow rate dependencies have shown that the addition of either O₂ or Ar to CHF₃ can be used effectively to change the etch selectivity between SiO₂ and Si₃N₄. The effective carrier lifetime of...[Show more]

CollectionsANU Research Publications
Date published: 2006-08-07
Type: Journal article
Source: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI: 10.1116/1.2333571


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