Skip navigation
Skip navigation

Defect generation at the Si–SiO₂ interface following corona charging

Jin, Hao; Weber, K. J.; Dang, N. C.; Jellett, W. E.

Description

A combination of capacitance-voltage and lifetime decay measurements is used to show that corona biasing of silicon oxidized samples results in the generation of additional interface defects and an increase in surface recombination. The onset of interface degradation occurs at relatively low electric fields, estimated to be less than ∼+∕−1.2MV∕cm. The majority of the defects generated by corona biasing can be removed by a short annealing at 400°C. The results are consistent with the hypothesis...[Show more]

CollectionsANU Research Publications
Date published: 2007-06-28
Type: Journal article
URI: http://hdl.handle.net/1885/16958
Source: Applied Physics Letters
DOI: 10.1063/1.2749867

Download

File Description SizeFormat Image
01_Jin_Defect_generation_at_the_2007.pdfPublished Version186.86 kBAdobe PDFThumbnail


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  23 August 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator