Tan, J.; Macdonald, D.; Bennett, N.; Kong, D.; Cuevas, A.; Romijn, I.
The degradation of the carrier lifetime in multicrystalline silicon due to the dissolution of metal precipitates during high temperature annealing is well known. This letter presents evidence indicating that the presence of phosphorus emitters during annealing can help reduce this recontamination. Part of the degradation observed is due to increased interstitial iron concentrations caused by the dissolution of iron precipitates during annealing. However, dissolution of other metals also seems...[Show more]
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