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Positron annihilation studies of the AlOₓ/SiO₂/Si interface in solar cell structures

Edwardson, C. J.; Coleman, P. G.; Li, T.-T. A.; Cuevas, A.; Ruffell, S.

Description

Film and film/substrate interfacecharacteristics of 30 and 60 nm-thick AlOₓfilmsgrown on Si substrates by thermal atomic layer deposition(ALD), and 30 nm-thick AlOₓfilms by sputtering, have been probed using variable-energy positron annihilation spectroscopy (VEPAS) and Doppler-broadened spectra ratio curves. All samples were found to have an interface which traps positrons, with annealing increasing this trapping response, regardless of growth method. Thermal ALD creates an AlOₓ/SiOₓ/Si...[Show more]

dc.contributor.authorEdwardson, C. J.
dc.contributor.authorColeman, P. G.
dc.contributor.authorLi, T.-T. A.
dc.contributor.authorCuevas, A.
dc.contributor.authorRuffell, S.
dc.date.accessioned2015-12-01T23:00:33Z
dc.date.available2015-12-01T23:00:33Z
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/1885/16951
dc.description.abstractFilm and film/substrate interfacecharacteristics of 30 and 60 nm-thick AlOₓfilmsgrown on Si substrates by thermal atomic layer deposition(ALD), and 30 nm-thick AlOₓfilms by sputtering, have been probed using variable-energy positron annihilation spectroscopy (VEPAS) and Doppler-broadened spectra ratio curves. All samples were found to have an interface which traps positrons, with annealing increasing this trapping response, regardless of growth method. Thermal ALD creates an AlOₓ/SiOₓ/Si interface with positron trapping and annihilation occurring in the Si side of the SiOₓ/Si boundary. An induced positive charge in the Si next to the interface reduces diffusion into the oxides and increases annihilation in the Si. In this region there is a divacancy-type response (20 ± 2%) before annealing which is increased to 47 ± 2% after annealing.Sputtering seems to not produce samples with this same electrostatic shielding; instead, positron trapping occurs directly in the SiOₓinterface in the as-deposited sample, and the positron response to it increases after annealing as an SiO₂ layer is formed. Annealing the film has the effect of lowering the film oxygen response in all film types. Compared to other structural characterization techniques, VEPAS shows larger sensitivity to differences in film preparation method and between as-deposited and annealed samples.
dc.description.sponsorshipT-T.A.L., S.R., and A.C. acknowledge funding from the Australian Research Council.
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 2/12/15). Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.3691895
dc.sourceJournal of Applied Physics
dc.subjectKeywords: Annealed samples; Electrostatic shielding; Film-substrate interfaces; Growth method; Positive charges; Positron response; Positron trapping; Preparation method; Si substrates; Solar cell structures; Structural characterization; Thermal ALD; Variable-energ
dc.titlePositron annihilation studies of the AlOₓ/SiO₂/Si interface in solar cell structures
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume111
dc.date.issued2012-03-07
local.identifier.absfor020406
local.identifier.absfor090605
local.identifier.ariespublicationu4241699xPUB9
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationEdwardson, Charlene, University of Bath, United Kingdom
local.contributor.affiliationColeman, Paul, University of Bath, United Kingdom
local.contributor.affiliationLi, Tsu-Tsung (Andrew), College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National University
local.contributor.affiliationCuevas, Andres, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National University
local.contributor.affiliationRuffell, Simon, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.bibliographicCitation.issue5
local.bibliographicCitation.startpage053515
local.identifier.doi10.1063/1.3691895
dc.date.updated2016-02-24T10:47:29Z
local.identifier.scopusID2-s2.0-84858965600
local.identifier.thomsonID000301729200036
CollectionsANU Research Publications

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