Edwardson, C. J.; Coleman, P. G.; Li, T.-T. A.; Cuevas, A.; Ruffell, S.
Film and film/substrate interfacecharacteristics of 30 and 60 nm-thick AlOₓfilmsgrown on Si substrates by thermal atomic layer deposition(ALD), and 30 nm-thick AlOₓfilms by sputtering, have been probed using variable-energy positron annihilation spectroscopy (VEPAS) and Doppler-broadened spectra ratio curves. All samples were found to have an interface which traps positrons, with annealing increasing this trapping response, regardless of growth method. Thermal ALD creates an AlOₓ/SiOₓ/Si...[Show more]
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