Positron annihilation studies of the AlOₓ/SiO₂/Si interface in solar cell structures
Film and film/substrate interfacecharacteristics of 30 and 60 nm-thick AlOₓfilmsgrown on Si substrates by thermal atomic layer deposition(ALD), and 30 nm-thick AlOₓfilms by sputtering, have been probed using variable-energy positron annihilation spectroscopy (VEPAS) and Doppler-broadened spectra ratio curves. All samples were found to have an interface which traps positrons, with annealing increasing this trapping response, regardless of growth method. Thermal ALD creates an AlOₓ/SiOₓ/Si...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Edwardson_Positron_annihilation_studies_2012.pdf||Published Version||1.53 MB||Adobe PDF|
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