Effect of gettered iron on recombination in diffused regions of crystalline silicon wafers
Crystalline silicon wafers, intentionally precontaminated with iron, were diffused with phosphorus and boron, and the recombination properties of the bulk and diffused regions extracted from injection-dependent carrier lifetime measurements. While the phosphorus diffusions were found to getter more than 99% of the iron from the bulk, the borondiffusions only extracted 65% in the best case. The presence of this gettered iron caused significant additional recombination in the boron diffused...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Macdonald_Effect_of_gettered_iron_on_2006.pdf||Published Version||169.75 kB||Adobe PDF|
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