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Effect of gettered iron on recombination in diffused regions of crystalline silicon wafers

Macdonald, D.; Mäckel, H.; Cuevas, A.


Crystalline silicon wafers, intentionally precontaminated with iron, were diffused with phosphorus and boron, and the recombination properties of the bulk and diffused regions extracted from injection-dependent carrier lifetime measurements. While the phosphorus diffusions were found to getter more than 99% of the iron from the bulk, the borondiffusions only extracted 65% in the best case. The presence of this gettered iron caused significant additional recombination in the boron diffused...[Show more]

CollectionsANU Research Publications
Date published: 2006-02-28
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.2181199


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