Fabrication and subband gap optical properties of silicon supersaturated with chalcogens by ion implantation and pulsed laser melting
Topographically flat, single crystal silicon supersaturated with the chalcogens S, Se, and Te was prepared by ion implantation followed by pulsed laser melting and rapid solidification. The influences of the number of laser shots on the atomic and carrier concentration-depth profiles were measured with secondary ion mass spectrometry and spreading resistance profiling, respectively. We found good agreement between the atomic concentration-depth profiles obtained from experiments and a...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Bob_Fabrication_and_subband_gap_2010.pdf||Published Version||408.84 kB||Adobe PDF|
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