Skip navigation
Skip navigation

Fabrication and subband gap optical properties of silicon supersaturated with chalcogens by ion implantation and pulsed laser melting

Bob, Brion P.; Kohno, Atsushi; Charnvanichborikarn, Supakit; Warrender, Jeffrey M.; Umezu, Ikurou; Tabbal, Malek; Williams, James S.; Aziz, Michael J.


Topographically flat, single crystal silicon supersaturated with the chalcogens S, Se, and Te was prepared by ion implantation followed by pulsed laser melting and rapid solidification. The influences of the number of laser shots on the atomic and carrier concentration-depth profiles were measured with secondary ion mass spectrometry and spreading resistance profiling, respectively. We found good agreement between the atomic concentration-depth profiles obtained from experiments and a...[Show more]

CollectionsANU Research Publications
Date published: 2010-06-16
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.3415544


File Description SizeFormat Image
01_Bob_Fabrication_and_subband_gap_2010.pdfPublished Version408.84 kBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator