Fabrication of epitaxial CoSi₂ nanowires
We have developed a method for fabricatingepitaxialCoSi₂nanowires using only conventional optical lithography and standard silicon processing steps. This method was successfully applied to ultrathin epitaxialCoSi₂ layers grown on Si(100) and silicon-on-insulator substrates. A nitride mask induces a stress field near its edges into the CoSi₂/Siheterostructure and leads to the separation of the CoSi₂ layer in this region during a rapid thermal oxidation step. A subsequent etching step and a...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Kluth_Fabrication_of_epitaxial_CoSi₂_2001.pdf||Published Version||444.74 kB||Adobe PDF|
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