Fabrication of epitaxial CoSi₂ nanowires
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Kluth, P.; Zhao, Q. T.; Winnerl, S.; Lenk, S.; Mantl, S.
Description
We have developed a method for fabricatingepitaxialCoSi₂nanowires using only conventional optical lithography and standard silicon processing steps. This method was successfully applied to ultrathin epitaxialCoSi₂ layers grown on Si(100) and silicon-on-insulator substrates. A nitride mask induces a stress field near its edges into the CoSi₂/Siheterostructure and leads to the separation of the CoSi₂ layer in this region during a rapid thermal oxidation step. A subsequent etching step and a...[Show more]
Collections | ANU Research Publications |
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Date published: | 2001-08-06 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/16595 |
Source: | Applied Physics Letters |
DOI: | 10.1063/1.1390318 |
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01_Kluth_Fabrication_of_epitaxial_CoSi₂_2001.pdf | Published Version | 444.74 kB | Adobe PDF | ![]() |
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