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Fabrication of epitaxial CoSi₂ nanowires

Kluth, P.; Zhao, Q. T.; Winnerl, S.; Lenk, S.; Mantl, S.

Description

We have developed a method for fabricatingepitaxialCoSi₂nanowires using only conventional optical lithography and standard silicon processing steps. This method was successfully applied to ultrathin epitaxialCoSi₂ layers grown on Si(100) and silicon-on-insulator substrates. A nitride mask induces a stress field near its edges into the CoSi₂/Siheterostructure and leads to the separation of the CoSi₂ layer in this region during a rapid thermal oxidation step. A subsequent etching step and a...[Show more]

CollectionsANU Research Publications
Date published: 2001-08-06
Type: Journal article
URI: http://hdl.handle.net/1885/16595
Source: Applied Physics Letters
DOI: 10.1063/1.1390318

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