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Nonvolatile memories using deep traps formed in HfO₂ by Nb ion implantation

Choul Kim, Min; Oh Kim, Chang; Taek Oh, Houng; Choi, Suk-Ho; Belay, K.; Elliman, R. G.; Russo, S. P.

Description

We report nonvolatile memories (NVMs) based on deep-energy trap levels formed in HfO₂ by metal ion implantation. A comparison of Nb- and Ta-implanted samples shows that suitable charge-trapping centers are formed in Nb-implanted samples, but not in Ta-implanted samples. This is consistent with density-functional theory calculations which predict that only Nb will form deep-energy levels in the bandgap of HfO₂. Photocurrent spectroscopy exhibits characteristics consistent with one of the trap...[Show more]

dc.contributor.authorChoul Kim, Min
dc.contributor.authorOh Kim, Chang
dc.contributor.authorTaek Oh, Houng
dc.contributor.authorChoi, Suk-Ho
dc.contributor.authorBelay, K.
dc.contributor.authorElliman, R. G.
dc.contributor.authorRusso, S. P.
dc.date.accessioned2015-11-19T04:12:24Z
dc.date.available2015-11-19T04:12:24Z
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/1885/16528
dc.description.abstractWe report nonvolatile memories (NVMs) based on deep-energy trap levels formed in HfO₂ by metal ion implantation. A comparison of Nb- and Ta-implanted samples shows that suitable charge-trapping centers are formed in Nb-implanted samples, but not in Ta-implanted samples. This is consistent with density-functional theory calculations which predict that only Nb will form deep-energy levels in the bandgap of HfO₂. Photocurrent spectroscopy exhibits characteristics consistent with one of the trap levels predicted in these calculations. Nb-implanted samples showing memory windows in capacitance–voltage (V) curves always exhibit current (I) peaks in I–V curves, indicating that NVM effects result from deep traps in HfO₂. In contrast, Ta-implanted samples show dielectric breakdowns during the I–V sweeps between 5 and 11 V, consistent with the fact that no trap levels are present. For a sample implanted with a fluence of 10¹³Nb cm⁻², the charge losses after 10⁴ s are ∼9.8 and ∼25.5% at room temperature (RT) and 85°C, respectively, and the expected charge loss after 10 years is ∼34% at RT, very promising for commercial NVMs.
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 19/11/15). Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.3554444
dc.sourceJournal of Applied Physics
dc.subjectKeywords: Band gaps; Capacitance voltage; Charge loss; Deep traps; Density-functional theory calculations; Dielectric breakdowns; Energy level; Energy trap; Fluences; I - V curve; Implanted samples; Memory window; Nonvolatile memories; Photocurrent spectroscopy; Ro
dc.titleNonvolatile memories using deep traps formed in HfO₂ by Nb ion implantation
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume109
dc.date.issued2011-03-08
local.identifier.absfor020499
local.identifier.ariespublicationu4155331xPUB419
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationKim, Min Choul, Kyung Hee University, Korea, South
local.contributor.affiliationKim, Chang Oh, Kyung Hee University, Korea, South
local.contributor.affiliationOh, Houng Taek, Kyung Hee University, Korea, South
local.contributor.affiliationChoi, Suk Ho, Kyung Hee University, Korea, South
local.contributor.affiliationBelay, Kidane, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationRusso, Salvy P, RMIT University, Australia
local.bibliographicCitation.issue5
local.bibliographicCitation.startpage053703
local.identifier.doi10.1063/1.3554444
dc.date.updated2016-02-24T10:39:00Z
local.identifier.scopusID2-s2.0-79952999500
local.identifier.thomsonID000288387900050
CollectionsANU Research Publications

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