Wang, Hao; Yuan, Jiayue; van Veldhoven, René P. J.; de Vries, Tjibbe; Smalbrugge, Barry; Geluk, Erik Jan; Nötzel, Richard
Position-controlled InAs quantum dots(QDs) are integrated into planar InP structures by employing selective area growth of InP pyramids and regrowth by metalorganic vapor-phase epitaxy. A smooth surface morphology is obtained at elevated regrowth temperature due to suppression of three-dimensional growth on the pyramids. The height differences are less than 30 nm after nominal 700 nm InP regrowth at 640 °C. Most important, the integrated QDs maintain good optical quality after regrowth for the...[Show more]
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