Skip navigation
Skip navigation

Planarization of InP pyramids containing integrated InAs quantum dots and their optical properties

Wang, Hao; Yuan, Jiayue; van Veldhoven, René P. J.; de Vries, Tjibbe; Smalbrugge, Barry; Geluk, Erik Jan; Nötzel, Richard


Position-controlled InAs quantum dots(QDs) are integrated into planar InP structures by employing selective area growth of InP pyramids and regrowth by metalorganic vapor-phase epitaxy. A smooth surface morphology is obtained at elevated regrowth temperature due to suppression of three-dimensional growth on the pyramids. The height differences are less than 30 nm after nominal 700 nm InP regrowth at 640 °C. Most important, the integrated QDs maintain good optical quality after regrowth for the...[Show more]

CollectionsANU Research Publications
Date published: 2010-11-19
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.3491025


File Description SizeFormat Image
01_Wang_Planarization_of_InP_pyramids_2010.pdfPublished Version632.54 kBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator