Growth and Characterisation of InP Nanowires and Nanowire-Based Heterostructures for Future Optoelectronic Device Applications
Indium Phosphide (InP) forms a cornerstone amongst direct band-gap III-V compound semiconductors with the possibility for a wide range of other III-V alloys to be lattice matched with it. It is commonly used in optical communications related device applications, high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs). The very low surface recombination velocity of InP has made its nanowire counterpart a standout amongst nanowires of other III-V materials...[Show more]
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