23% efficient p-type crystalline silicon solar cells with hole-selective passivating contacts based on physical vapor deposition of doped silicon films
Of all the materials available to create carrier-selective passivating contacts for silicon solar cells, those based on thin films of doped silicon have permitted to achieve the highest levels of performance. The commonly used chemical vapour deposition methods use pyrophoric or toxic gases like silane, phosphine and diborane. In this letter, we propose a safer and simpler approach based on physical vapour deposition (PVD) of both the silicon and the dopant. An in-situ doped polycrystalline...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|Access Rights:||Open Access|
|01_Yan_23%25_efficient_p-type_2018.pdf||1.05 MB||Adobe PDF|
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