Extended x-ray absorption fine structure study of porous GaSb formed by ion implantation
Porous GaSb has been formed by Ga ion implantation into crystalline GaSb substrates at either room temperature or −180 °C. The morphology has been characterized using scanning electron microscopy and the atomic structure was determined using extended x-ray absorption fine structure spectroscopy. Room-temperature implantation at low fluences leads to the formation of ∼20-nm voids though the material remains crystalline. Higher fluences cause the microstructure to evolve into a network of...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Kluth_Extended_x-ray_absorption_fine_2011.pdf||Published Version||1.23 MB||Adobe PDF|
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