Extended x-ray absorption fine structure study of porous GaSb formed by ion implantation
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Kluth, P.; Kluth, S. M.; Johannessen, B.; Glover, C. J.; Foran, G. J.; Ridgway, M. C.
Description
Porous GaSb has been formed by Ga ion implantation into crystalline GaSb substrates at either room temperature or −180 °C. The morphology has been characterized using scanning electron microscopy and the atomic structure was determined using extended x-ray absorption fine structure spectroscopy. Room-temperature implantation at low fluences leads to the formation of ∼20-nm voids though the material remains crystalline. Higher fluences cause the microstructure to evolve into a network of...[Show more]
Collections | ANU Research Publications |
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Date published: | 2011-12-14 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/16499 |
Source: | Journal of Applied Physics |
DOI: | 10.1063/1.3665643 |
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01_Kluth_Extended_x-ray_absorption_fine_2011.pdf | Published Version | 1.23 MB | Adobe PDF | ![]() |
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