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Extended x-ray absorption fine structure study of porous GaSb formed by ion implantation

Kluth, P.; Kluth, S. M.; Johannessen, B.; Glover, C. J.; Foran, G. J.; Ridgway, M. C.


Porous GaSb has been formed by Ga ion implantation into crystalline GaSb substrates at either room temperature or −180 °C. The morphology has been characterized using scanning electron microscopy and the atomic structure was determined using extended x-ray absorption fine structure spectroscopy. Room-temperature implantation at low fluences leads to the formation of ∼20-nm voids though the material remains crystalline. Higher fluences cause the microstructure to evolve into a network of...[Show more]

CollectionsANU Research Publications
Date published: 2011-12-14
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.3665643


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