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Effect of (O, As) dual implantation on p-type doping of ZnO films

Oh Kim, Chang; Hee Shin, Dong; Kim, Sung; Choi, Suk-Ho; Belay, K.; Elliman, R. G.


Optical and electrical characteristics of ZnOfilms co-implanted with O and As ions have been investigated by photoluminescence(PL), Hall-effect, and current-voltage (I-V) measurements. 100-nm-thick ZnOfilms grown on n-type Si (100) wafers by RF sputtering have been implanted with various fluences of 30 keV O and 100 keV As ions at room temperature, and subsequently annealed at 800 °C for 20 min in a N2 ambient. The dually-implanted ZnOfilms show stable p-type characteristics for particular...[Show more]

CollectionsANU Research Publications
Date published: 2011-11-22
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.3662908


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