Effect of (O, As) dual implantation on p-type doping of ZnO films
Optical and electrical characteristics of ZnOfilms co-implanted with O and As ions have been investigated by photoluminescence(PL), Hall-effect, and current-voltage (I-V) measurements. 100-nm-thick ZnOfilms grown on n-type Si (100) wafers by RF sputtering have been implanted with various fluences of 30 keV O and 100 keV As ions at room temperature, and subsequently annealed at 800 °C for 20 min in a N2 ambient. The dually-implanted ZnOfilms show stable p-type characteristics for particular...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Oh Kim_Effect_of_(O,_As)_dual_2011.pdf||Published Version||1.07 MB||Adobe PDF|
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