Haberl, Bianca; Bogle, S. N.; Li, T.; McKerracher, I.; Ruffell, S.; Munroe, P.; Williams, J. S.; Abelson, J. R.; Bradby, J. E.
We investigate the structure of magnetron-sputtered (MS) amorphous silicon(a-Si) prepared under standard deposition conditions and compare this to pure ion-implanted (II) a-Si. The structure of both films is characterized in their as-prepared and thermally annealed states. Significant differences are observed in short- and medium-range order following thermal annealing. Whereas II a-Si undergoes structural relaxation toward a continuous random network, MS a-Si exhibits little change....[Show more]
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