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Temperature dependent carrier lifetime studies on Ti-doped multicrystalline silicon

Paudyal, B. B.; McIntosh, K. R.; Macdonald, D. H.


Carrier lifetimemeasurements were performed on deliberately Ti-doped multicrystalline silicon wafers using a temperature controlled photoconductance device. The dominant recombination center was found to be the double-donor level associated with interstitial titanium. The interstitial Ti concentrations in multicrystalline silicon wafers were determined by measuring the Shockley–Read–Hall time constant for holes and using the known values of the thermal velocity and capture cross section for...[Show more]

CollectionsANU Research Publications
Date published: 2009-06-23
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.3139286


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