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Improved silicon surface passivation achieved by negatively charged silicon nitride films

Weber, K. J.; Jin, H.

Description

A corona discharge is used to create and store negative charge in the silicon nitridefilms of silicon dioxide/silicon nitride stacks. Effective lifetime measurements on both textured and planar, as well as both boron diffused and undiffused silicon samples passivated with silicon oxide/silicon nitride stacks, show that the creation of negative charge in the nitride layer results in an improvement in the surface passivation for all samples, with very low (<2 cm/s) effective surface recombination...[Show more]

CollectionsANU Research Publications
Date published: 2009-02-11
Type: Journal article
URI: http://hdl.handle.net/1885/16480
Source: Applied Physics Letters
DOI: 10.1063/1.3077157

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