In situ mechanical resonance behaviour of pristine and defective zinc blende GaAs nanowires
The structural versatility of semiconducting gallium arsenide (GaAs) nanowires (NWs) provides an exciting direction for the engineering of their mechanical and dynamic properties. However, the dynamic behaviour of GaAs NWs remains unexplored. In this study, comprehensive in situ mechanical resonance tests were conducted to explore the dynamic behaviour of pristine and defective zinc blende GaAs NWs. The effects of stacking faults (SFs), amorphous shell, NW tapering and end-mass particles were...[Show more]
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