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In situ mechanical resonance behaviour of pristine and defective zinc blende GaAs nanowires

Pickering, Edmund; Bo, Arixin; Zhan, Haifei; Liao, Xiaozhou; Tan, Hark Hoe; Gu, YuanTong

Description

The structural versatility of semiconducting gallium arsenide (GaAs) nanowires (NWs) provides an exciting direction for the engineering of their mechanical and dynamic properties. However, the dynamic behaviour of GaAs NWs remains unexplored. In this study, comprehensive in situ mechanical resonance tests were conducted to explore the dynamic behaviour of pristine and defective zinc blende GaAs NWs. The effects of stacking faults (SFs), amorphous shell, NW tapering and end-mass particles were...[Show more]

CollectionsANU Research Publications
Date published: 2018
Type: Journal article
URI: http://hdl.handle.net/1885/164792
Source: Nanoscale
DOI: 10.1039/c7nr07449b
Access Rights: Open Access

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