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Degradation of oxide-passivated boron-diffused silicon

Thomson, Andrew F.; McIntosh, Keith R.

Description

Recombination in oxide-passivated boron-diffused silicon is found to increase severely at room temperature. The degradation reaction leads to a 45 fold increase in emitter recombination that saturates in ∼120 days, irrespective of whether the samples received a forming-gas anneal. The degradation was also examined for diffusions stored at 50, 75, and 100 °C. The results indicate that the degradation follows a second-order reaction where the time constant of one component of the reaction is...[Show more]

CollectionsANU Research Publications
Date published: 2009-08-03
Type: Journal article
URI: http://hdl.handle.net/1885/16479
Source: Applied Physics Letters
DOI: 10.1063/1.3195656

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