Degradation of oxide-passivated boron-diffused silicon
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Thomson, Andrew F.; McIntosh, Keith R.
Description
Recombination in oxide-passivated boron-diffused silicon is found to increase severely at room temperature. The degradation reaction leads to a 45 fold increase in emitter recombination that saturates in ∼120 days, irrespective of whether the samples received a forming-gas anneal. The degradation was also examined for diffusions stored at 50, 75, and 100 °C. The results indicate that the degradation follows a second-order reaction where the time constant of one component of the reaction is...[Show more]
Collections | ANU Research Publications |
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Date published: | 2009-08-03 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/16479 |
Source: | Applied Physics Letters |
DOI: | 10.1063/1.3195656 |
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01_Thomson_Degradation_of_2009.pdf | Published Version | 194.31 kB | Adobe PDF |
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