Degradation of oxide-passivated boron-diffused silicon
Recombination in oxide-passivated boron-diffused silicon is found to increase severely at room temperature. The degradation reaction leads to a 45 fold increase in emitter recombination that saturates in ∼120 days, irrespective of whether the samples received a forming-gas anneal. The degradation was also examined for diffusions stored at 50, 75, and 100 °C. The results indicate that the degradation follows a second-order reaction where the time constant of one component of the reaction is...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Thomson_Degradation_of_2009.pdf||Published Version||194.31 kB||Adobe PDF|
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