Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer
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Raj, Vidur; Santos, Tamara; Rougieux, Fiacre
; Vora, Kaushal
; Lysevych, Mykhaylo
; Fu, Lan
; Mokkapati, Sudha; Tan, Hark Hoe
; Jagadish, Chennupati
Description
According to the Shockley–Queisser limit, the maximum achievable efficiency for a single junction solar cell is ~33.2% which corresponds to a bandgap (E g) of 1.35 eV (InP). However, the maximum reported efficiency for InP solar cells remain at 24.2% ± 0.5%, that is >25% below the standard Shockley–Queisser limit. Through a wide range of simulations, we propose a new device structure, ITO/ ZnO/i-InP/p+ InP (p-i-ZnO-ITO) which might be able to fill this efficiency gap. Our simulation shows...[Show more]
Collections | ANU Research Publications |
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Date published: | 2018 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/164782 |
Source: | Journal of Physics D: Applied Physics |
DOI: | 10.1088/1361-6463/aad7e3 |
Access Rights: | Open Access |
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Journal of Physics D- Applied Physics _ Final.pdf | 1.18 MB | Adobe PDF | ![]() |
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