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Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer

Raj, Vidur; Santos, Tamara; Rougieux, Fiacre; Vora, Kaushal; Lysevych, Mykhaylo; Fu, Lan; Mokkapati, Sudha; Tan, Hark Hoe; Jagadish, Chennupati

Description

According to the Shockley–Queisser limit, the maximum achievable efficiency for a single junction solar cell is ~33.2% which corresponds to a bandgap (E g) of 1.35 eV (InP). However, the maximum reported efficiency for InP solar cells remain at 24.2%  ±  0.5%, that is  >25% below the standard Shockley–Queisser limit. Through a wide range of simulations, we propose a new device structure, ITO/ ZnO/i-InP/p+ InP (p-i-ZnO-ITO) which might be able to fill this efficiency gap. Our simulation shows...[Show more]

CollectionsANU Research Publications
Date published: 2018
Type: Journal article
URI: http://hdl.handle.net/1885/164782
Source: Journal of Physics D: Applied Physics
DOI: 10.1088/1361-6463/aad7e3
Access Rights: Open Access

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