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Thermal activation energy for the passivation of the n-type crystalline silicon surface by hydrogenated amorphous silicon

Mitchell, Jonathon; Macdonald, Daniel; Cuevas, Andres

Description

Excellent surface passivation of crystalline silicon wafers is known to occur following post-deposition thermal annealing of intrinsic a-Si:H thin-film layers deposited by plasma-enhanced chemical vapor deposition. In this work, layer thicknesses ranging from 5 to 50 nm were used to indirectly study the surface passivation mechanism by sequentially measuring the effective carrier lifetime as a function of annealing time and temperature. From this, an activation energy of 0.7±0.1 eV was...[Show more]

dc.contributor.authorMitchell, Jonathon
dc.contributor.authorMacdonald, Daniel
dc.contributor.authorCuevas, Andres
dc.date.accessioned2015-11-12T00:53:33Z
dc.date.available2015-11-12T00:53:33Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/16476
dc.description.abstractExcellent surface passivation of crystalline silicon wafers is known to occur following post-deposition thermal annealing of intrinsic a-Si:H thin-film layers deposited by plasma-enhanced chemical vapor deposition. In this work, layer thicknesses ranging from 5 to 50 nm were used to indirectly study the surface passivation mechanism by sequentially measuring the effective carrier lifetime as a function of annealing time and temperature. From this, an activation energy of 0.7±0.1 eV was calculated, suggesting that surface passivation is reaction-limited and not determined by a bulk hydrogen diffusion process. We conclude that the primary surface reaction stems from surface rearrangement of hydrogen already near the interface.
dc.description.sponsorshipThis work was supported by the Australian Research Council.
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 12/11/15). Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.3120765
dc.sourceApplied Physics Letters
dc.subjectKeywords: a-Si:H; Annealing time; Crystalline silicon surfaces; Crystalline silicon wafers; Hydrogen diffusions; Hydrogenated amorphous silicons; Plasma-enhanced chemical vapor depositions; Post depositions; Surface passivations; Surface rearrangements; Thermal act
dc.titleThermal activation energy for the passivation of the n-type crystalline silicon surface by hydrogenated amorphous silicon
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume94
dc.date.issued2009-04-20
local.identifier.absfor090605
local.identifier.ariespublicationu4137410xPUB1
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationMitchell, Jonathon, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National University
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National University
local.contributor.affiliationCuevas, Andres, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National University
local.bibliographicCitation.issue16
local.bibliographicCitation.startpage162102
local.bibliographicCitation.lastpage3
local.identifier.doi10.1063/1.3120765
dc.date.updated2016-02-24T10:37:08Z
local.identifier.scopusID2-s2.0-65449158975
local.identifier.thomsonID000265823300026
CollectionsANU Research Publications

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