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Thermal activation energy for the passivation of the n-type crystalline silicon surface by hydrogenated amorphous silicon

Mitchell, Jonathon; Macdonald, Daniel; Cuevas, Andres

Description

Excellent surface passivation of crystalline silicon wafers is known to occur following post-deposition thermal annealing of intrinsic a-Si:H thin-film layers deposited by plasma-enhanced chemical vapor deposition. In this work, layer thicknesses ranging from 5 to 50 nm were used to indirectly study the surface passivation mechanism by sequentially measuring the effective carrier lifetime as a function of annealing time and temperature. From this, an activation energy of 0.7±0.1 eV was...[Show more]

CollectionsANU Research Publications
Date published: 2009-04-20
Type: Journal article
URI: http://hdl.handle.net/1885/16476
Source: Applied Physics Letters
DOI: 10.1063/1.3120765

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