Thermal activation energy for the passivation of the n-type crystalline silicon surface by hydrogenated amorphous silicon
Excellent surface passivation of crystalline silicon wafers is known to occur following post-deposition thermal annealing of intrinsic a-Si:H thin-film layers deposited by plasma-enhanced chemical vapor deposition. In this work, layer thicknesses ranging from 5 to 50 nm were used to indirectly study the surface passivation mechanism by sequentially measuring the effective carrier lifetime as a function of annealing time and temperature. From this, an activation energy of 0.7±0.1 eV was...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Mitchell_Thermal_activation_energy_for_2009.pdf||Published Version||102.42 kB||Adobe PDF|
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