Skip navigation
Skip navigation

Enhanced transport in transistor by tuning transition-metal oxide electronic states interfaced with diamond

Yin, Zongyou; Tordjman, Moshe; Lee, Youngtack; Vardi, Alon; Kalish, Rafi; del Alamo, Jesus A.

Description

High electron affinity transition-metal oxides (TMOs) have gained a central role in two-dimensional (2D) electronics by enabling unprecedented surface charge doping efficiency in numerous exotic 2D solid-state semiconductors. Among them, diamond-based 2D electronics are entering a new era by using TMOs as surface acceptors instead of previous molecular-like unstable acceptors. Similarly, surface-doped diamond with TMOs has recently yielded record sheet hole concentrations (2 × 1014 cm−2) and...[Show more]

CollectionsANU Research Publications
Date published: 2018
Type: Journal article
URI: http://hdl.handle.net/1885/164715
Source: Science Advances
DOI: 10.1126/sciadv.aau0480
Access Rights: Open Access

Download

File Description SizeFormat Image
01_Yin_Enhanced_transport_in_2018.pdf2.07 MBAdobe PDFThumbnail


This item is licensed under a Creative Commons License Creative Commons

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator