Lei, W.; Wang, Y. L.; Chen, Y. H.; Jin, P.; Ye, X. L.; Xu, B.; Wang, Z. G.
The authors report the self-organized growth of InAs∕InAlAsquantum wires on nominal (001) InP substrate and (001) InP substrates misoriented by 2°, 4°, and 8° towards both [−110] and . The influence of substrate misorientation on the structural and optical properties of these InAs∕InAlAsquantum wires is studied by transmission electron microscopy and photoluminescence measurements. Compared with that grown on nominal (001) InP substrate, the density of InAs∕InAlAsquantum wires grown on...[Show more]
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