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Room temperature photocurrent spectroscopy of single zincblende and wurtzite InP nanowires

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Maharjan, A.; Pemasiri, K.; Kumar, P.; Wade, A.; Smith, L. M.; Jackson, H. E.; Yarrison-Rice, J. M.; Kogan, A.; Paiman, Suriati; Gao, Q.; Jagadish, C.; Tan, Hark Hoe

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Simple photolithographic techniques are used to fabricate single InPnanowire devices with back-to-back Schottky barriers. Direct imaging of the photoresponse shows that the active regions of the device are spatially localized near the reverse-biased Schottky barrier. By tuning the laser excitation energy from below to well above the energy gap,photocurrentspectroscopy can illuminate the zincblende or wurtzite nature of the nanowire device even at room temperature.

dc.contributor.authorMaharjan, A.
dc.contributor.authorPemasiri, K.
dc.contributor.authorKumar, P.
dc.contributor.authorWade, A.
dc.contributor.authorSmith, L. M.
dc.contributor.authorJackson, H. E.
dc.contributor.authorYarrison-Rice, J. M.
dc.contributor.authorKogan, A.
dc.contributor.authorPaiman, Suriati
dc.contributor.authorGao, Q.
dc.contributor.authorJagadish, C.
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-11-09T23:17:32Z
dc.date.available2015-11-09T23:17:32Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/16423
dc.description.abstractSimple photolithographic techniques are used to fabricate single InPnanowire devices with back-to-back Schottky barriers. Direct imaging of the photoresponse shows that the active regions of the device are spatially localized near the reverse-biased Schottky barrier. By tuning the laser excitation energy from below to well above the energy gap,photocurrentspectroscopy can illuminate the zincblende or wurtzite nature of the nanowire device even at room temperature.
dc.description.sponsorshipWe acknowledge the support of the NSF through DMR Grant Nos. 0806700 and 0804199, and ECCS Grant No. 0701703, as well as the University of Cincinnati Institute for Nanoscale Science and Technology. The Australian authors acknowledge support from the Australian Research Council.
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 10/11/15). Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.3138137
dc.sourceApplied Physics Letters
dc.subjectKeywords: Active regions; Direct imaging; InP; Nanowire devices; Photocurrent spectroscopy; Photoresponse; Room temperature; Schottky barriers; Wurtzite; Zinc-blende; Electric wire; Laser excitation; Nanowires; Passivation; Schottky barrier diodes; Zinc sulfide; Ph
dc.titleRoom temperature photocurrent spectroscopy of single zincblende and wurtzite InP nanowires
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume94
dc.date.issued2009-05-15
local.identifier.absfor030306
local.identifier.ariespublicationU4105084xPUB522
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationMaharjan, A., University of Cincinnati, United States of America
local.contributor.affiliationPemasiri, Kuranananda, University of Cincinnati, United States of America
local.contributor.affiliationKumar, P, University of Cincinnati, United States of America
local.contributor.affiliationWade, A, University of Cincinnati, United States of America
local.contributor.affiliationSmith, Leigh M , University of Cincinnati, United States of America
local.contributor.affiliationJackson, Howard E , University of Cincinnati, United States of America
local.contributor.affiliationYarrison-Rice, Jan M , University of Miami, United States of America
local.contributor.affiliationKogan, A, University of Cincinnati, United States of America
local.contributor.affiliationPaiman, Suriati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.bibliographicCitation.issue19
local.bibliographicCitation.startpage193115
local.identifier.doi10.1063/1.3138137
dc.date.updated2016-02-24T10:36:09Z
local.identifier.scopusID2-s2.0-67049118103
local.identifier.thomsonID000266263400064
CollectionsANU Research Publications

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