Maharjan, A.; Pemasiri, K.; Kumar, P.; Wade, A.; Smith, L. M.; Jackson, H. E.; Yarrison-Rice, J. M.; Kogan, A.; Paiman, S.; Gao, Q.; Tan, H. H.; Jagadish, C.
Simple photolithographic techniques are used to fabricate single InPnanowire devices with back-to-back Schottky barriers. Direct imaging of the photoresponse shows that the active regions of the device are spatially localized near the reverse-biased Schottky barrier. By tuning the laser excitation energy from below to well above the energy gap,photocurrentspectroscopy can illuminate the zincblende or wurtzite nature of the nanowire device even at room temperature.
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