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A Diamond: H/WO3 Metal-Oxide-Semiconductor Field-Effect Transistor

Yin, Zongyou; Tordjman, Moshe; Alon, Vardi; Kalish, Rafi; del Alamo, Jesus A.


A p-type Diamond:H/WO 3 metal-oxide-semiconductor field-effect transistor (MOSFET) based on surface transfer doping is demonstrated. Using a low-temperature ALD-grown HfO 2 as gate insulator, the Diamond:H/WO 3 MOSFETs show excellent output characteristics, gate-controllable 2-D hole gas, and low gate leakage current. Long-channel FETs exhibit improved subthreshold behavior but reduced transconductance with respect to short-channel devices. An observed WO 3 -thickness-dependent threshold...[Show more]

CollectionsANU Research Publications
Date published: 2018
Type: Journal article
Source: IEEE Electron Device Letters
DOI: 10.1109/LED.2018.2808463


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