Optimization of a Cl₂–H₂ inductively coupled plasma etching process adapted to nonthermalized InP wafers for the realization of deep ridge heterostructures
Inductively coupled plasmaetching using Cl₂–H₂ chemistry with no additive gas (CH₄, Ar, or N₂) is studied to realize deep (>5μm) ridges with smooth and vertical sidewalls. The process is optimized for nonthermalized InP wafers to avoid the use of thermal grease. Cleaning of the rear side of the wafer after etching is avoided, which is suitable for an industrial process or for critical subsequent steps such as epitaxial regrowth. The influence of the Cl₂∕H₂ ratio on the etching mechanism is...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures|
|01_Guilet_Optimization_of_a_Cl₂–H₂_2006.pdf||Published Version||680.65 kB||Adobe PDF|
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