Interface creation and stress dynamics in plasma-deposited silicon dioxide films
The stress in amorphous silicon dioxide filmgrown by plasma-assisted deposition was investigated both during and after film growth for continuously and intermittently depositedfilms. It is shown that an intermittent deposition leads to the creation of interfacial regions during film growth, but also causes dynamical structural change in already-deposited film which results in a significantly different stress-thickness profile measured after deposition.Film growth in the continuously...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Au_Interface_creation_and_stress_2006.pdf||Published Version||65.84 kB||Adobe PDF|
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