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Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs

Lloyd-Hughes, J.; Merchant, S. K. E.; Lan, F.; Tan, H. H.; Jagadish, C.; Castro-Camus, E.; Johnston, M. B.


The carrier dynamics of photoexcited electrons in the vicinity of the surface of (NH₄)₂S-passivated GaAs were studied via terahertz (THz) emission spectroscopy and optical-pump THz-probe spectroscopy. THz emission spectroscopy measurements, coupled with Monte Carlo simulations of THz emission, revealed that the surface electric field of GaAs reverses after passivation. The conductivity of photoexcited electrons was determined via optical-pump THz-probe spectroscopy, and was found to...[Show more]

CollectionsANU Research Publications
Date published: 2006-12-04
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.2398915


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