Temperature-dependent photoluminescence of ZnO layers grown on 6H-SiC substrates
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Ashrafi, A. B. M. A.; Binh, N. T.; Zhang, B. P.; Segawa, Y.
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Temperature-dependent photoluminescence(PL) of ZnO layers grown on 6H-SiC substrates has been described. The PLspectra were dominated by free exciton (FX) emission throughout the whole temperature range, which reflects shallow nonradiative centers in high crystalline ZnO layers. The temperature-dependent exciton peak energy as well as intensity quenching due to overlapping of FX and D⁰X (donor-bound exciton) bands has been addressed with an inclusion of donor-bound exciton-like defects. The...[Show more]
dc.contributor.author | Ashrafi, A. B. M. A. | |
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dc.contributor.author | Binh, N. T. | |
dc.contributor.author | Zhang, B. P. | |
dc.contributor.author | Segawa, Y. | |
dc.date.accessioned | 2015-11-05T01:08:05Z | |
dc.date.available | 2015-11-05T01:08:05Z | |
dc.identifier.issn | 0021-8979 | |
dc.identifier.uri | http://hdl.handle.net/1885/16363 | |
dc.description.abstract | Temperature-dependent photoluminescence(PL) of ZnO layers grown on 6H-SiC substrates has been described. The PLspectra were dominated by free exciton (FX) emission throughout the whole temperature range, which reflects shallow nonradiative centers in high crystalline ZnO layers. The temperature-dependent exciton peak energy as well as intensity quenching due to overlapping of FX and D⁰X (donor-bound exciton) bands has been addressed with an inclusion of donor-bound exciton-like defects. The D⁰Xlinewidth of ∼8 meV exhibited the thermal activation energy of ∼16 meV, closely consistent with the exciton-defect binding energy. This particular bound-exciton peak suggests that it dissociates into a FX and a neutral-donor-bound-like defects pair complex with the increase of temperature. | |
dc.description.sponsorship | This work was supported in part by the Special Postdoctoral Research Fellowship Program, Photodynamics Research Center, The Institute of Physical and Chemical Research, Japan. | |
dc.publisher | American Institute of Physics (AIP) | |
dc.rights | http://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 5/11/15). Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.1649451 | |
dc.source | Journal of Applied Physics | |
dc.title | Temperature-dependent photoluminescence of ZnO layers grown on 6H-SiC substrates | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.identifier.citationvolume | 95 | |
dc.date.issued | 2004-06-15 | |
local.identifier.absfor | 100799 | |
local.identifier.absfor | 091299 | |
local.identifier.absfor | 020501 | |
local.identifier.ariespublication | U4047546xPUB81 | |
local.publisher.url | https://www.aip.org/ | |
local.type.status | Published Version | |
local.contributor.affiliation | Ashrafi, Abm (Almamun), College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | |
local.contributor.affiliation | Binh, N. T., RIKEN, Japan | |
local.contributor.affiliation | Zhang, B. P. , RIKEN, Japan | |
local.contributor.affiliation | Segawa, Y., RIKEN, Japan | |
local.bibliographicCitation.issue | 12 | |
local.bibliographicCitation.startpage | 7738 | |
local.bibliographicCitation.lastpage | 7741 | |
local.identifier.doi | 10.1063/1.1649451 | |
Collections | ANU Research Publications |
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