Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon
Defect centers generated in crystalline silicon by MeV Si implants have been investigated by a combination of photoluminescence, variable-energy positron annihilation measurements, depth profiling by etching,annealing studies, and the dependence on impurities. The broad 935meVphotoluminescence band occurs at intrinsic interstitial complexes, the 835meV band at small vacancy clusters, and the 1062meV line at a low concentration of vacancy clusters which are possibly formed by aggregation of the...[Show more]
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|Source:||Journal of Applied Physics|
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